Linholm - Electrical Linewidth and Overlay. Linholm received the B. He heads the Integrated Circuits Technology Group, which is responsible for designing, developing, and evaluating measurements methods for evaluating silicon integrated circuits, manufacturing tools, and processes with emphasis on test structures, associated data analysis techniques, novel sensors, and advanced microelectromechanical systems.
Katsuhiko Kubota received the B. Since he joined Hitachi Ltd.
31st IEEE International Conference on Microelectronic Test Structures (ICMTS)
He is now responsible for reliability modeling and analysis of deep submicron devices covering oxide integrity, hot carrier, electromigration and ESD. Currently he is interested in oxide leak mechanisms. Satoshi Habu received the B. He is currently heading group for developing instruments. Hans Tuinhout - Transistor Matching. His current research activities are focused on very accurate DC device measurements for characterization and improvement of matching performance of mixed-signal IC processes.
Naoki Kasai received his B. Saraswat, as a visiting researcher.
He received the B. Since , he has been engaged in the development of nonvolatile memory in the Microelectronics Engineering Laboratory, Toshiba Corporation. He has been especially concerning the reliability issue of the nonvolatile memory. Hazama is a member of the Japan Society of Applied Physics. Katsuhiro Kawai received the B. He joined Sharp Corp.
Japan, in where he has been engaged in the TFT development center liquid crystal group. The Technical Program consists of eleven sessions of contributed papers, equipment presentation, and exhibition. Papers that are judged by the reviewers to be appropriate for visual presentation papers primarily concerned with data summaries, mathematical derivations, or demonstrations will be displayed as posters during the Conference.
A dedicated two-hour Poster Session will be held in which authors will be given five minutes for oral presentations to the general audience. In addition, a five-minute talk will be given by each exhibiting company during the equipment exhibit. Semiconductor Leading Edge Technologies, Inc. Yoshiaki Hagiwara, Sony, Japan. Tuinhout and W. This paper describes a measurement approach that is used for very accurate BJT matching measurements down to the sub 25 m V s D Vbe region.
Pergoot, P. Cox, P. Wuyts and P. By using a new test structure and method we are able to characterize the dependence of the high-ohmic polycrystalline HIPO resistor parameters on process changes and topology as it appears in the real ASIC's. In this paper we report the most important impact we have discovered, that of metal lines placed in parallel with the HIPO resistors. Different metallization schemes are compared concerning the effect on the analog characteristics of the HIPO resistor.
A circuit that allows the measurement of or more MOS transistors on a single 1. It has been integrated on a fully depleted SOI process and on a standard bulk process. Extraction methodology as well as matching properties of SOI transistors are discussed. Requirements and Challenges for Lithography: Beyond nm Optics.
Yukinori Kuroki, Kyushu Univ. Cresswell, N. Guillaume, R. Guthrie and. Linewidth values obtained in electrical test-structure metrology are directly proportional to available estimates of the local sheet resistance whose reliability is thus of leading importance in obtaining the correct electrical linewidth.
Latch-up - Wikipedia
However, in the case of a new type of electrically-certifiable CD test structures fabricated from monocrystalline SOI films, the van-der-Pauw resistors used for sheet-resistance extraction are fabricated with three-dimensional, instead of planar, geometries. This abstract presents a new algorithm for sheet-resistance extraction from van-der-Pauw resistors replicated in such films and shows examples of supporting experimental data and their comparison with current-flow analyses.
Walton, J. Stevenson, M. This paper reports on the use of microelectronic test structures to characterise a novel fabrication technique for thin-film electronic circuit boards. In this technology circuit tracks are formed on paper-like substrates by depositing films of a metal-loaded ink via a standard lithographic printing process. Sheet resistance and linewidth are electrically evaluated and these compared with optical and surface profiling measurements. Rezvani, S. Bothra, X. Lin and A. In this abstract a new method for extraction of poly CD and sheet rho for narrow poly lines is presented, which is useful in salicide processes where the standard method of electrical extraction of poly sheet rho and CD is not applicable anymore.
In addition this new method allows for electrical extraction of spacer width. This method is applied to a salicided 0. Arimoto, S. Nakamura, S. A multivariable regression analysis was applied to predict gate lengths by using six ellipsometric parameters which, were obtained by employing different measurement conditions such as laser incidence angles, directions, and samples without patterns. Allen, O. Cresswell and L. Test structures fabricated in monocrystalline SOI films have physical properties that are highly desirable for reference features in CD calibration artifacts.
In addition, reference-feature linewidth measurement by electrical testing can be conducted at significantly lower cost than by alternative methods. However, it is not yet clear how well electrical testing can serve as a reference to more fundamental CD-certification measures such as lattice-plane counting. Monitoring variations with temperature of electrically-measured CD ECD and sheet resistance of electrical test structures replicated in monocrystalline materials such as silicon offer an important opportunity for CD certification assurance because the pertinent physics of these materials is well established.
Co-Chairmen: Hans P.
Tuinhout, Philips, The Netherlands. A novel method of extraction of emitter and base resistances of bipolar junction transistors, BJTs, involving both static characteristics and low frequency noise data is proposed and tested on quasi self-aligned BJTs. The method requires no special test structures and is applied to transistors working in the normal operation regime, thus it may be readily applied to test procedures for various types of BJTs.
This paper describes the scaling limit of the width and the structure of narrow isolation U-grooves by using new test structures for evaluating isolation capacitance and isolation breakdown voltage.
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It is concluded that the minimum width of the isolation U-groove will be limited by the increase in isolation capacitance, and an effective method is proposed to overcome the problem. Future SOI structure is also discussed. Scholten and D. A new scaling rule for R SD and thus for the mobility reduction parameter q 1 of MOS Model 9 leads to a considerably improved modeling accuracy in both the linear and saturation regime.
Gennum Corp. The DC extraction uses linear or explicit extraction equations. By comparing measured and simulated S-parameters it is verified that the resulting parameter set provides accurate modeling across frequency and bias, making accurate circuit simulation and statistical studies possible. Advanced characterization method for sub-micron DRAM cell transistors has been proposed for analysis of transistor test structures with actual memory cell patterns. In this method, new transistor parameters, Vgoff and Vgsat, have been considered for transistors' off-leakage and full writing to storage node, respectively.
These parameters are found to be good monitoring parameters for DRAM failures such as bit failures. Manabe, K. Okuyama, K. Kubota, A. Nozoe, T. Karashima, K. Hitachi Ltd. This paper describes a method for measuring the small current through the oxides on the order of 10 A or less using a floating gate MOSFET and the application results on flash memories with thin tunnel oxides.
We found some abnormal phenomena which cannot be obtained from SILC measurements using large capacitors. We also discuss possible mechanisms to explain the phenomena. Defect parameter extraction plays an important role in process control and yield prediction.